Local crystallographic texture and voiding in passivated copper interconnects
نویسندگان
چکیده
منابع مشابه
Texture and stress analysis of 120 nm copper interconnects
A scanning transmission electron microscope diffraction technique was used to determine the local orientation of copper grains in 120 nm copper interconnect (CI) lines. These grains exhibit a <1 1 0> normal orientation while the < 112 > and the < 1 11 > type orientations are present along the length and width of the CI line, respectively. Stresses, as high as 625 MPa, are present at the copper/...
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Stress-induced voiding (SIV) is investigated in Cu-based, deep-submicron, dual damascene technology. Two failure modes are revealed by TEM failure analysis. For one mode, voids are formed under the via when the via connects a wide metal lead below it. For the via which is instead under a wide metal line, voids are formed right above the via bottom. The void source results from the supersaturate...
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Surface-state engineering strategies for atomic-size interconnects on H-passivated Si(100) surfaces are explored. The well-known simple interconnect formed by removing H-atoms from one of the Si atoms per dimer of a dimer row along the Si(100) surface is poorly conducting. This is because one-dimensional-like instabilities open electronic gaps. Here, we explore two strategies to reduce the inst...
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Preferred crystallographic orientation, or texture, occurs almost universally, both in natural and man-made systems. Many components and devices in electronic and magnetic systems are fabricated from materials that have crystallographic texture. With the rapidly increasing use of thin film technology, where sharp axisymmetric crystallographic texture normal to the film plane is frequently obser...
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The resistance change due to electromigration induced voiding in modern copper interconnects ended by a Through Silicon Via (TSV) is analyzed. It is shown that two different modes of resistance increase exist during the period of void growth under the TSV. Primarily responsible are imperfections at the TSV bottom introduced during the fabrication process. Consequently, the time to failure of su...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1996
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.117856